1.31 - Precursor Chemistry – Group 13 Nitrides and Phosphides (Al, Ga, and In)

E.G Gillan

doi:10.1016/B978-0-08-097774-4.00132-7

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Book chapter

1.31 - Precursor Chemistry – Group 13 Nitrides and Phosphides (Al, Ga, and In)

E.G Gillan

Comprehensive Inorganic Chemistry II, pp.969-1000

Elsevier Ltd, Second Edition

2013

DOI: 10.1016/B978-0-08-097774-4.00132-7

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Abstract

This chapter describes recent developments in the design and use of dual-source and single-source precursors for the growth of group 13 (mainly Al, Ga, and In) nitrides and phosphides. These main-group materials are semiconductors with bandgap energies ranging from the infrared to ultraviolet range and several have well-established uses in visible light emission related to lasers and light-emitting diodes. Many recent precursor-based syntheses target thin film or nanostructured materials growth. Precursor methods are well defined for metal phosphide nanoparticle and nanowire growth, while challenges still exist for the corresponding metal nitride nanostructure growth.

Nanoparticles

Aluminum phosphide

Precursors

Metathesis

Indium nitride

Gallium phosphide

Chemical vapor deposition

Gallium nitride

Indium phosphide

Aluminum nitride

Thermolysis

Details

Title: Subtitle: 1.31 - Precursor Chemistry – Group 13 Nitrides and Phosphides (Al, Ga, and In)
Creators: E.G Gillan - University of Iowa, Iowa City, IA, USA
Resource Type: Book chapter
Publication Details: Comprehensive Inorganic Chemistry II, pp.969-1000
Edition: Second Edition
DOI: 10.1016/B978-0-08-097774-4.00132-7
Publisher: Elsevier Ltd
Language: English
Date published: 2013
Academic Unit: Chemistry
Record Identifier: 9983985802902771

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