Conference proceeding
Auger suppression in type-II mid-IR laser diodes
1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009), Vol.2, pp.605-606 vol.2
1999
DOI: 10.1109/LEOS.1999.811873
Abstract
Auger recombination is the limiting process for carrier lifetimes at 300 K lasing densities in interband mid-infrared (mid-IR) active regions. The dominant Auger process is intrinsic, and thus is present even in the cleanest materials. It is possible, however, to reduce the Auger recombination rate of artificial mid-IR semiconductors through a careful design of the electronic structure of the material. We present here a design for a 3.4 /spl mu/m emitting active region, in which the calculated Auger recombination rate is smaller than the typical Shockley-Read-Hall (SRH) rate at room temperature. The structure is based on the InAs/GaInSb type-II material system, which has been explored for the past few years as an active region in the mid-IR.
Details
- Title: Subtitle
- Auger suppression in type-II mid-IR laser diodes
- Creators
- M.E. Flatte - Dept. of Phys. & Astron., Iowa Univ., Iowa City, IA, USAJ.T. Olesberg - University of IowaT.F. Boggess - University of IowaT.C. Hasenberg - University of IowaC.H. Grein - University of Illinois at Chicago
- Resource Type
- Conference proceeding
- Publication Details
- 1999 IEEE LEOS Annual Meeting Conference Proceedings. LEOS'99. 12th Annual Meeting. IEEE Lasers and Electro-Optics Society 1999 Annual Meeting (Cat. No.99CH37009), Vol.2, pp.605-606 vol.2
- Publisher
- IEEE
- DOI
- 10.1109/LEOS.1999.811873
- ISSN
- 1092-8081
- Language
- English
- Date published
- 1999
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428665902771
Metrics
1 Record Views