Conference proceeding
Carrier dynamics in narrow-band-gap quantum wells measured with subpicosecond mid-wave infrared pulses
CLEO '96 : summaries of papers presented at the Conference on Lasers and Electro-Optics 2-7 June 1996. Anaheim Convention Center, Anaheim, California , pp.50-50
01/01/1996
Abstract
This paper describes time-resolved differential transmission measurements of carrier recombination, cooling, and transport in multiple quantum well structures composed of GaInSb/InAs superlattice wells with AlGaSb barriers. This and similar structures are currently of interest as the active region in 3-4- mu m diode lasers. Measurements were performed at room temperature using 140-fs pump pulses from a mode-locked Ti:sapphire laser operating at 830 nm and at a repetition rate of 76 MHz and 170-fs probe pulses from a synchronously-pumped optical parametric oscillator operating at 3.55 mu m.
Details
- Title: Subtitle
- Carrier dynamics in narrow-band-gap quantum wells measured with subpicosecond mid-wave infrared pulses
- Creators
- S W McCahonS A AnsonD-J JangJ T OlesbergM E FlattéT. F BoggessD H ChowT C HasenbergC. H Grein
- Resource Type
- Conference proceeding
- Publication Details
- CLEO '96 : summaries of papers presented at the Conference on Lasers and Electro-Optics 2-7 June 1996. Anaheim Convention Center, Anaheim, California , pp.50-50
- Publisher
- Optical Society of America; Washington, DC
- Language
- English
- Date published
- 01/01/1996
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984428765502771
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