Characterization and Application of Large Magnetoresistance in Organic Semiconductors

Markus Wohlgenannt; Govindarajan Veeraraghavan; Yugang Sheng; Omer Mermer; Tho D Nguyen

doi:10.1109/DRC.2007.4373740

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Conference proceeding

Characterization and Application of Large Magnetoresistance in Organic Semiconductors

Markus Wohlgenannt, Govindarajan Veeraraghavan, Yugang Sheng, Omer Mermer and Tho D Nguyen

2007 65th Annual Device Research Conference, pp.251-252

06/2007

DOI: 10.1109/DRC.2007.4373740

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Abstract

We report on the extensive experimental characterization of a recently discovered (Francis et al., 2004) large and intriguing magnetoresistive effect in OLEDs that reaches up to 10% at room temperature for magnetic fields, B = 10mT. This magnetoresistive effect is therefore amongst the largest of any bulk material. The existence of this effect is highly surprising, since it has generally been believed that large room-temperature magnetoresistive effects can exist only in ferromagnetic devices, whereas our devices are constructed entirely from non-magnetic materials.

Magnetic Materials

Flat panel displays

Large screen displays

Liquid crystal displays

Magnetic devices

Magnetic properties

Magnetoresistance

Organic light emitting diodes

Organic semiconductors

Sensor arrays

Details

Title: Subtitle: Characterization and Application of Large Magnetoresistance in Organic Semiconductors
Creators: Markus Wohlgenannt - University of Iowa
Govindarajan Veeraraghavan - University of Iowa
Yugang Sheng - University of Iowa
Omer Mermer - University of Iowa
Tho D Nguyen - University of Iowa
Resource Type: Conference proceeding
Publication Details: 2007 65th Annual Device Research Conference, pp.251-252
Publisher: IEEE
DOI: 10.1109/DRC.2007.4373740
ISSN: 1548-3770
eISSN: 2640-6853
Language: English
Date published: 06/2007
Academic Unit: Physics and Astronomy
Record Identifier: 9984428686002771

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