Conference proceeding
Comparison of mid-infrared laser diode active regions
Proceedings of SPIE, Vol.3628(1), pp.148-155
In-Plane Semiconductor Lasers III
04/01/1999
DOI: 10.1117/12.344541
Abstract
The development of mid-infrared interband diode lasers has been hindered by factors such as Auger recombination and intervalence band absorption, which become increasingly important at longer wavelengths. A number of structures have been proposed in which the effects of these processes are reduced. The maximum gain per unit volumetric current density can be used as a figure of merit for comparing different active region materials. Using this figure of merit, we compare a series of structures with band gaps near 0.3 eV (i.e., wavelengths near 4 microns). The figure of merit is obtained from gain spectra calculated using superlattice K(DOT)p theory and a combination of calculated and measured recombination rates. We show that devices based on active regions incorporating type-I InAsSb/AlInAsSb or InAsSb/InAsP quantum wells should have room temperature threshold currents 7 - 13 times smaller than those of devices based on bulk InAs. However, devices using type-II superlattice active regions should have room temperature threshold currents that are a factor of 3 - 4 times smaller than those of the type-I quantum wells. The figure of merit can also be used to determine the optimal thickness of the active region as a function of waveguide loss and optical mode width.
Details
- Title: Subtitle
- Comparison of mid-infrared laser diode active regions
- Creators
- Jonathon T Olesberg - University of IowaMichael E Flatte - University of IowaBennett J Brown - University of IowaTom C Hasenberg - Univ. of Iowa (USA)Scott A Anson - University of IowaThomas F Boggess - University of IowaChristoph H Grein - University of Illinois at Chicago
- Resource Type
- Conference proceeding
- Publication Details
- Proceedings of SPIE, Vol.3628(1), pp.148-155
- Conference
- In-Plane Semiconductor Lasers III
- DOI
- 10.1117/12.344541
- ISSN
- 0277-786X
- Language
- English
- Date published
- 04/01/1999
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428777102771
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