Conference proceeding
Defect states in type-II strained-layer superlatticese
Quantum Sensing and Nanophotonic Devices VII, Vol.7608
Proceedings of SPIE
01/01/2010
DOI: 10.1117/12.846915
Abstract
The electronic structure of isoelectronic defects, donors and acceptors is calculated within a full superlattice picture for InAs/GaSb and InAs/GaInSb superlattices. The wavefunctions associated with these states extend beyond a typical layer width for the superlattices. Thus band alignments between the layers as well as interface properties are predicted to dramatically change these defects' binding energy as well as their influence on superlattice electronic, optical and transport properties. Defect properties are also substantially modified by their location within a superlattice layer.
Details
- Title: Subtitle
- Defect states in type-II strained-layer superlatticese
- Creators
- Michael E. Flatte - University of IowaCraig E. Pryor - University of Iowa
- Contributors
- M Razeghi (Editor)R Sudharasanan (Editor)G J Brown (Editor)
- Resource Type
- Conference proceeding
- Publication Details
- Quantum Sensing and Nanophotonic Devices VII, Vol.7608
- Series
- Proceedings of SPIE
- DOI
- 10.1117/12.846915
- ISSN
- 0277-786X
- eISSN
- 1996-756X
- Publisher
- Spie-Int Soc Optical Engineering
- Number of pages
- 9
- Language
- English
- Date published
- 01/01/2010
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428789702771
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