Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires

H. E. Jackson; M. Montazeri; M. Fickenscher; L. M. Smith; J. M. Yarrison-Rice; J. H. Kang; Q. Gao; H. H. Tan; C. Jagadish; Y. Guo; J. Zou; M. E. Pistol; C. E. Pryor

doi:10.1063/1.3666461

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Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires

Conference proceeding

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Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires

H. E. Jackson, M. Montazeri, M. Fickenscher, L. M. Smith, J. M. Yarrison-Rice, J. H. Kang, Q. Gao, H. H. Tan, C. Jagadish, Y. Guo, …

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, Vol.1399(1), pp.477-478

AIP Conference Proceedings

01/01/2011

DOI: 10.1063/1.3666461

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Abstract

We have studied core-shell nanowires with widely different core and shell lattice constants, namely GaAs core with GaP shell nanowires. We use Raman scattering to probe strain in these nanowires and relate this strain to the observed photoluminescence. The Raman and photoluminescence measurements are in agreement with 8 band k.p calculations for these structures. These results suggest that the electronic properties of core-shall nanowires can be tuned over a wide range by using the strain generated by growing core/shell materials with different lattice constants and different core/shell thicknesses.

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Details

Title: Subtitle: Direct Measure of Strain and Electronic Structure in GaAs/GaP Core-Shell Nanowires
Creators: H. E. Jackson - University of Cincinnati
M. Montazeri - University of Cincinnati
M. Fickenscher - University of Cincinnati
L. M. Smith - University of Cincinnati
J. M. Yarrison-Rice - Miami University
J. H. Kang - ACT
Q. Gao - ACT
H. H. Tan - ACT
C. Jagadish - ACT
Y. Guo - University of Queensland
J. Zou - University of Cincinnati
M. E. Pistol - Lund University
C. E. Pryor - Univ Iowa, Opt Sci & Technol Ctr, Iowa City, IA 54242 USA
Contributors: J Ihm (Editor)
H Cheong (Editor)
Resource Type: Conference proceeding
Publication Details: PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, Vol.1399(1), pp.477-478
Publisher: Amer Inst Physics
Series: AIP Conference Proceedings
DOI: 10.1063/1.3666461
ISSN: 0094-243X
eISSN: 1551-7616
Number of pages: 2
Grant note: Australian Research Council DMR-0806700; 086572; ECCS-0701703 / National Science Foundation; National Science Foundation (NSF)
Language: English
Date published: 01/01/2011
Academic Unit: Physics and Astronomy
Record Identifier: 9984429020002771

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