Energy relaxation and recombination in 1.3-micron-wavelength, self-assembled, InGaAs/GaAs quantum dots

T.F. Boggess; L. Zhang; M.E. Flatte; D.G. Deppe; D.L. Huffaker; O.B. Shchekin; C. Cao

doi:10.1109/CLEO.2000.907126

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Energy relaxation and recombination in 1.3-micron-wavelength, self-assembled, InGaAs/GaAs quantum dots

T.F. Boggess, L. Zhang, M.E. Flatte, D.G. Deppe, D.L. Huffaker, O.B. Shchekin and C. Cao

Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088), pp.366-367

2000

DOI: 10.1109/CLEO.2000.907126

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Abstract

Summary form only given.We report ultrafast time-resolved photoluminescence (PL) upconversion measurements of the carrier energy relaxation and carrier recombination in 1.3 /spl mu/m-wavelength, selfassembled, InGaAs-GaAs QDs. Results are described for temperatures ranging from 10-300 K and for excitation photon energies both above and within the wetting layer.

Physics

Atomic measurements

Cities and towns

Delay

Filling

Gallium arsenide

Indium gallium arsenide

Quantum dots

Radiative recombination

Stationary state

Details

Title: Subtitle: Energy relaxation and recombination in 1.3-micron-wavelength, self-assembled, InGaAs/GaAs quantum dots
Creators: T.F. Boggess - University of Iowa
L. Zhang - University of Iowa
M.E. Flatte
D.G. Deppe
D.L. Huffaker
O.B. Shchekin
C. Cao
Resource Type: Conference proceeding
Publication Details: Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088), pp.366-367
Publisher: IEEE
DOI: 10.1109/CLEO.2000.907126
Language: English
Date published: 2000
Academic Unit: Physics and Astronomy; Electrical and Computer Engineering
Record Identifier: 9984429017902771

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