Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

Eric K Lindmark; John P Prineas; Galina Khitrova; Hyatt M Gibbs; Oleg B Gusev; Boris J Ber; Mikhail S Bresler; Irina N Yassievich; B. P Zakharchenya; V. F Masterov

doi:10.1117/12.271154

Conference proceeding

Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures

Eric K Lindmark, John P Prineas, Galina Khitrova, Hyatt M Gibbs, Oleg B Gusev, Boris J Ber, Mikhail S Bresler, Irina N Yassievich, B. P Zakharchenya and V. F Masterov

Proceedings of SPIE, Vol.2996(1), pp.2-7

Rare-Earth-Doped Devices

05/02/1997

DOI: 10.1117/12.271154

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Abstract

Erbium was introduce into GaAs/AlGaAs quantum well structures in the process of growth by MBE in an attempt to enhance semiconductor-Er transfer by means of a resonance between quantum well and Er ion transitions. Instead the quantum well was washed out by efficient interdiffusion of Ga and Al and diffusion of Er. We have demonstrated also that erbium interacts with aluminum in arsenides; this interaction leads to the formation of Er-containing Al- enriched clusters.

Details

Title: Subtitle: Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures
Creators: Eric K Lindmark - Optical Sciences
John P Prineas - Optical Sciences
Galina Khitrova - Optical Sciences
Hyatt M Gibbs - Optical Sciences
Oleg B Gusev - Ioffe Institute
Boris J Ber - Ioffe Institute
Mikhail S Bresler - Ioffe Institute
Irina N Yassievich - Ioffe Institute
B. P Zakharchenya - Ioffe Institute
V. F Masterov - Technical Univ. St. Petersburg (Russia)
Resource Type: Conference proceeding
Publication Details: Proceedings of SPIE, Vol.2996(1), pp.2-7
Conference: Rare-Earth-Doped Devices
DOI: 10.1117/12.271154
ISSN: 0277-786X
Language: English
Date published: 05/02/1997
Academic Unit: Physics and Astronomy
Record Identifier: 9984428765702771

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