Conference proceeding
Extremely low reflectivity nanoporous black silicon surface by copper catalyzed etching for efficient solar cells
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), pp.346-351
Photovoltaic Specialist Conference (PVSC), 44 (Washington, DC, USA, 06/25/2017–06/30/2017)
06/2017
DOI: 10.1109/PVSC.2017.8366117
Abstract
In this work, we report on a process based on copper (Cu) catalyzed etching of silicon (Si) to obtain extremely low reflectivity nanoporous `black silicon' (bSi) surface. We explore both one-step and two-step etching process, and find that one-step etching results in a uniformly etched surface reproducibly, compared with the two-step process. Adding ascorbic acid (C 6 H 8 O 6 ) in the one-step process recipe results in inverted pyramid shaped pores that enhance light trapping and lowers the bSi surface reflectivity. We observe that the optimum concentration of hydrogen peroxide (H 2 O 2 ) in the etching solution depends on the sample size. The lowest spectrum-weighted-average reflectivity (R avg ) obtained from the optimized one-step etching process is 3.36%.
Details
- Title: Subtitle
- Extremely low reflectivity nanoporous black silicon surface by copper catalyzed etching for efficient solar cells
- Creators
- K. A. S. M. Ehteshamul Haque - University of IowaWenqi Duan - University of IowaFatima Toor - University of Iowa
- Resource Type
- Conference proceeding
- Publication Details
- 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), pp.346-351
- Conference
- Photovoltaic Specialist Conference (PVSC), 44 (Washington, DC, USA, 06/25/2017–06/30/2017)
- DOI
- 10.1109/PVSC.2017.8366117
- Publisher
- IEEE
- Language
- English
- Date published
- 06/2017
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984197996402771
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