Conference proceeding
Improved Quantum Efficiency in AlGaInSb/InAs Superlattices for Mid-Infrared Optoelectronics
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), pp.1-4
08/2018
DOI: 10.1109/RAPID.2018.8508973
Abstract
Several mid-infrared superlattice and emitter regions, including new combinations, and have been designed and grown by molecular beam epitaxy. An ultrafast technique has been refined with CW measurements to obtain A, B, C recombination coefficients and emitter quantum efficiency. Promising results on AlGaInSb/InAs superlattices are presented, in addition to other material combinations.
Details
- Title: Subtitle
- Improved Quantum Efficiency in AlGaInSb/InAs Superlattices for Mid-Infrared Optoelectronics
- Creators
- John Prineas - University of IowaAndrew Muellerleile - University of IowaCassandra Bogh - University of IowaJonathon Olesberg - University of IowaAaron Muhowski - University of IowaMichael Flatte - University of IowaKatrina Schrock - University of Iowa
- Resource Type
- Conference proceeding
- Publication Details
- 2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), pp.1-4
- Publisher
- IEEE
- DOI
- 10.1109/RAPID.2018.8508973
- Language
- English
- Date published
- 08/2018
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428790402771
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