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Improved Quantum Efficiency in AlGaInSb/InAs Superlattices for Mid-Infrared Optoelectronics
Conference proceeding

Improved Quantum Efficiency in AlGaInSb/InAs Superlattices for Mid-Infrared Optoelectronics

John Prineas, Andrew Muellerleile, Cassandra Bogh, Jonathon Olesberg, Aaron Muhowski, Michael Flatte and Katrina Schrock
2018 IEEE Research and Applications of Photonics In Defense Conference (RAPID), pp.1-4
08/2018
DOI: 10.1109/RAPID.2018.8508973

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Abstract

Several mid-infrared superlattice and emitter regions, including new combinations, and have been designed and grown by molecular beam epitaxy. An ultrafast technique has been refined with CW measurements to obtain A, B, C recombination coefficients and emitter quantum efficiency. Promising results on AlGaInSb/InAs superlattices are presented, in addition to other material combinations.
Charge carrier density Current measurement Density measurement Extraterrestrial measurements mid-infrared molecular beam epitaxy Radiative recombination Semiconductor device measurement superlattice Superlattices ultrafast carrier dynamics

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