Conference proceeding
Inapplicability of a simply parameterized threshold current in Sb-based IR lasers
Proceedings of SPIE, Vol.3284(1), pp.325-331
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
04/07/1998
DOI: 10.1117/12.304459
Abstract
We examine theoretically the influence of temperature and composition on the threshold current densities of mid-wave infrared lasers with active regions consisting of InAs/InGaSb superlattices. Temperature shifts of the bands may result in significant variations in intersubband absorption and Auger recombination rates, giving rise to a threshold current density that is not well parameterized by a characteristic temperature T
. Superlattices that are optimized to have minimal threshold current densities are shown to require plus or minus 3.5 angstrom accuracy in InGaSb layer thicknesses, and plus or minus 0.25 angstrom accuracy in InAs layer thickness in order to retain optimum operating characteristics.
Details
- Title: Subtitle
- Inapplicability of a simply parameterized threshold current in Sb-based IR lasers
- Creators
- Christoph H Grein - University of Illinois at ChicagoMichael E Flatte - University of IowaHenry Ehrenreich - Harvard University Press
- Resource Type
- Conference proceeding
- Publication Details
- Proceedings of SPIE, Vol.3284(1), pp.325-331
- Conference
- In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
- DOI
- 10.1117/12.304459
- ISSN
- 0277-786X
- Language
- English
- Date published
- 04/07/1998
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428678502771
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