Interconnect Open Defect Diagnosis with Physical Information

Wei Zou; Wu-Tung Cheng; Sudhakar M Reddy

doi:10.1109/ATS.2006.261021

Back

Conference proceeding

Interconnect Open Defect Diagnosis with Physical Information

Wei Zou, Wu-Tung Cheng and Sudhakar M Reddy

2006 15th Asian Test Symposium, Vol.2006, pp.203-209

11/2006

DOI: 10.1109/ATS.2006.261021

View Online

Abstract

Circuit behavior in the presence of interconnect open defects is affected by four major factors: the capacitances between the floating node and its neighboring nodes, the capacitances inside down-stream gates, initial trapped charge, and the threshold voltages of down-stream gates. Current interconnect open diagnosis methods either ignore all of these factors or consider a subset of them only. Thus the diagnosis results from current procedures may not be as accurate as possible. In this paper, we present an interconnect open defect diagnosis method taking all these factors into account. Experiments conducted on benchmark circuits demonstrate that the proposed method can achieve a very high diagnosis accuracy and resolution

Failure Analysis

Logic

Capacitance

Circuit faults

Cities and towns

CMOS technology

Graphics

Integrated circuit interconnections

Threshold voltage

Wire

Details

Title: Subtitle: Interconnect Open Defect Diagnosis with Physical Information
Creators: Wei Zou - Mentor Graphics
Wu-Tung Cheng - Mentor Graphics
Sudhakar M Reddy - University of Iowa
Resource Type: Conference proceeding
Publication Details: 2006 15th Asian Test Symposium, Vol.2006, pp.203-209
DOI: 10.1109/ATS.2006.261021
ISSN: 1081-7735
eISSN: 2377-5386
Publisher: IEEE
Language: English
Date published: 11/2006
Academic Unit: Electrical and Computer Engineering
Record Identifier: 9984197295402771

Metrics

19 Record Views