Conference proceeding
Modeling of very long infrared wavelength InAs/GaInSb strained layer superlattice detectors
Proceedings of SPIE, Vol.4795(1), pp.39-43
Materials for Infrared Detectors II
01/01/2002
DOI: 10.1117/12.452265
Abstract
The optimal performance of VLWIR (15 m cutoff wavelength) photovoltaic detectors is assessed theoretically. The electronic band structures are computed with a fourteen-band restricted-basis envelope function Hamiltonian that includes terms copuling heavy and light holes at the superlattice interfaces. These terms describe the type of bonding at the interfaces (InSb or GaAs-like) and result in approximately 25 meV energy gap corrections in thin superlattices in comparison with conventional envelope-function approaches that neglect these terms. Auger lifetimes and upper bounds to detector detectivities are computed with these accurate band structures. The Auger transition rate calculations include Umklapp terms in the transition amplitude.
Details
- Title: Subtitle
- Modeling of very long infrared wavelength InAs/GaInSb strained layer superlattice detectors
- Creators
- Christoph H Grein - University of Illinois at ChicagoWayne H Lau - University of IowaT. L Harbert - University of IowaMichael E Flatte - University of Iowa
- Resource Type
- Conference proceeding
- Publication Details
- Proceedings of SPIE, Vol.4795(1), pp.39-43
- Conference
- Materials for Infrared Detectors II
- DOI
- 10.1117/12.452265
- ISSN
- 0277-786X
- Language
- English
- Date published
- 01/01/2002
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429054102771
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