Conference proceeding
Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.18(3), pp.1623-1627
Papers from the 18th north american conference on molecular beam epitaxy
05/01/2000
DOI: 10.1116/1.591440
Abstract
We have developed a broken-gap (type II) quantum well active region for midwave infrared interband lasers which exhibits a significantly increased Auger lifetime over that of previous designs.
Details
- Title: Subtitle
- Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes
- Creators
- T. C. Hasenberg - University of IowaP. S. Day - University of IowaE. M. Shaw - University of IowaD. J. Magarrell - University of IowaJ. T. Olesberg - University of IowaC. Yu - University of IowaThomas F. Boggess - University of IowaM. E. Flátte - University of Iowa
- Resource Type
- Conference proceeding
- Publication Details
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol.18(3), pp.1623-1627
- Conference
- Papers from the 18th north american conference on molecular beam epitaxy
- DOI
- 10.1116/1.591440
- ISSN
- 0734-211X
- eISSN
- 1520-8567
- Number of pages
- 5
- Language
- English
- Date published
- 05/01/2000
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428827002771
Metrics
1 Record Views