Nanowire and Superlattice Mid-Infrared Emitters on Silicon

John Prineas; Xinxin Li; Kailing Zhang; Aaron Muhowski; Fatima Toor

doi:10.1109/PHOSST.2019.8794925

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Conference proceeding

Nanowire and Superlattice Mid-Infrared Emitters on Silicon

John Prineas, Xinxin Li, Kailing Zhang, Aaron Muhowski and Fatima Toor

2019 IEEE Photonics Society Summer Topical Meeting Series (SUM), pp.1-2

07/2019

DOI: 10.1109/PHOSST.2019.8794925

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Abstract

We present 6.1 Å mid-infrared superlattice light emitters on (100) Si that outperform those on GaSb, and mid-infrared (wurzite) nanowires grown on (111) Si with favorable emitter characteristics, including Auger coefficients an order of magnitude smaller than comparable planar (zinc blende) materials.

Charge carrier lifetime

Light emitting diodes

Radiative recombination

Silicon

Substrates

Superlattices

Urban areas

Details

Title: Subtitle: Nanowire and Superlattice Mid-Infrared Emitters on Silicon
Creators: John Prineas - University of Iowa
Xinxin Li - University of Iowa
Kailing Zhang - University of Iowa
Aaron Muhowski - University of Iowa
Fatima Toor - University of Iowa
Resource Type: Conference proceeding
Publication Details: 2019 IEEE Photonics Society Summer Topical Meeting Series (SUM), pp.1-2
DOI: 10.1109/PHOSST.2019.8794925
eISSN: 2376-8614
Publisher: IEEE
Language: English
Date published: 07/2019
Academic Unit: Electrical and Computer Engineering; Iowa Technology Institute; Physics and Astronomy; Holden Comprehensive Cancer Center
Record Identifier: 9984197328902771

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