Conference proceeding
Performance of 64x64 MWIR super lattice light-emitting diode (SLED) array for IR scene generation
Proceedings of SPIE, Vol.6942(1), pp.69420I-69420I-9
Technologies for Synthetic Environments: Hardware-in-the-Loop Testing XIII
04/03/2008
DOI: 10.1117/12.782652
Abstract
We designed and fabricated 64x64 supper lattice light emitting diode (SLED) array with peak emission wavelength of 3.8 micron. The light emission is observed from the bottom side of the device through the substrate. The CMOS driver circuit is fabricated in the 130 nm IBM 8HP SiGe process. The unit cells were designed to source up to 100mA to the LED. These unit cells can be individually addressable, and have analog drive and memory that can operate at a 1 kHz array refresh rate. We use supper lattice epitaxial active region LED structures grown on n-type GaSb substrates. After initial mesa etching and contact metal deposition, the LED array is flip chip mounted on the LCC package. The light emission is observed from the LED array by InSb focal plane MWIR camera and the apparent black body temperature is measured.
Details
- Title: Subtitle
- Performance of 64x64 MWIR super lattice light-emitting diode (SLED) array for IR scene generation
- Creators
- Naresh C Das - DEVCOM Army Research LaboratoryFouad Kiamilev - University of DelawareJ. P Prineas - University of IowaJ. T Olesberg - University of IowaE. J Koerperick - University of IowaL. M Murray - Univ. of IowaT. F Boggess - University of Iowa
- Resource Type
- Conference proceeding
- Publication Details
- Proceedings of SPIE, Vol.6942(1), pp.69420I-69420I-9
- Conference
- Technologies for Synthetic Environments: Hardware-in-the-Loop Testing XIII
- DOI
- 10.1117/12.782652
- ISSN
- 0277-786X
- Language
- English
- Date published
- 04/03/2008
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984429014302771
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