Conference proceeding
Performance optimization techniques for the front and back of nanostructured 'black silicon' solar cells
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), pp.3080-3085
06/2018
DOI: 10.1109/PVSC.2018.8547924
Abstract
In this work we present techniques to improve the front and back surface performance of nanostructured black silicon (bSi) solar cells. Proximity doping using ammonium dihydrogen phosphate (ADP) is used to reduce the physical impact on the nanostructure of bSi during fabrication. Potassium hydroxide (KOH) is used to etch off the highly doped region of the front emitter. Forming gas anneal (FGA) is employed to reduce the series resistance and enhance surface passivation, improving cell efficiency by over 31%. The back-surface-field (BSF) formed by sputtered aluminum (A1) is optimized to reduce backside recombination rate, improving external quantum efficiency (EQE) by an average of 8.31% in the long wavelength region.
Details
- Title: Subtitle
- Performance optimization techniques for the front and back of nanostructured 'black silicon' solar cells
- Creators
- Wenqi Duan - University of IowaBingtao Gao - University of IowaK A S M Ehteshamul Haque - University of IowaFatima Toor - University of Iowa
- Resource Type
- Conference proceeding
- Publication Details
- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), pp.3080-3085
- DOI
- 10.1109/PVSC.2018.8547924
- Publisher
- IEEE
- Language
- English
- Date published
- 06/2018
- Academic Unit
- Electrical and Computer Engineering; Iowa Technology Institute; Physics and Astronomy; Holden Comprehensive Cancer Center
- Record Identifier
- 9984197221202771
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