Recycled IC detection through aging sensor

Daniele Rossi; Vasileios Tenentes; Saqib Khursheed; Sudhakar M Reddy

doi:10.1109/ETS.2018.8400713

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Conference proceeding

Recycled IC detection through aging sensor

Daniele Rossi, Vasileios Tenentes, Saqib Khursheed and Sudhakar M Reddy

2018 IEEE 23rd European Test Symposium (ETS), Vol.2018-, pp.1-2

05/2018

DOI: 10.1109/ETS.2018.8400713

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Abstract

In this paper, we propose a novel technique to detect recycled ICs via an on-chip, coarse-grained aging sensor, which can be applied to low-power circuits featuring power gating. The sensor detects the increase in the power-rail discharge time of power-gated circuits, when the circuit enters the sleep condition. Through HSPICE simulations, we prove that power network discharge time (τ dV ) is extremely sensitive to the age of the circuit. Indeed, after only 1 month of operation, τ dV increases by more than 3X and, after 1 year, its increase exceeds 7X. Our technique enables the detection of recycled ICs with a very high confidence and is a considerably more sensitive indicator of an aged device that alternative solutions relying on fine-grained performance degradation sensors.

Aging

Degradation

Delays

Discharges (electric)

Integrated circuits

Partial discharges

Details

Title: Subtitle: Recycled IC detection through aging sensor
Creators: Daniele Rossi - University of Hertfordshire
Vasileios Tenentes - University of Southampton
Saqib Khursheed - University of Liverpool
Sudhakar M Reddy - University of Iowa
Resource Type: Conference proceeding
Publication Details: 2018 IEEE 23rd European Test Symposium (ETS), Vol.2018-, pp.1-2
DOI: 10.1109/ETS.2018.8400713
ISSN: 1530-1877
eISSN: 1558-1780
Publisher: IEEE
Language: English
Date published: 05/2018
Academic Unit: Electrical and Computer Engineering
Record Identifier: 9984197441902771

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