Conference proceeding
Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy
Proceedings of SPIE - The International Society for Optical Engineering, Vol.10114, pp.1011419-1011419-6
02/20/2017
DOI: 10.1117/12.2267737
Abstract
InAs nanowires directly integrated on Si platform show great promise in fabricating next generation mid-infrared optoelectronic devices. In this study we demonstrated the growth of catalyst-free, selective-area InAs nanowire arrays on electron beam patterned Si3N4/Si(111) by molecular beam epitaxy. Growth parameters were studied, and nanowire growth kinetics dependence on patterned mask opening diameter and interwire distance was investigated. Under certain growth conditions, nanowire diameter was found to be relatively independent of nanohole diameter and pitch. We also realized the growth of randomly-nucleated, self-assembled nanowires on Si(111) and investigated the temperature, flux influence on nanowire morphology.
Details
- Title: Subtitle
- Selective-area growth of InAs nanowire arrays on Si3N4/Si(111) by molecular beam epitaxy
- Creators
- K Zhang - University of IowaV Ray - University of MichiganP Herrera-Fierro - The Univ. of Michigan (United States)J. R Sink - University of IowaF Toor - University of IowaJ. P Prineas - University of Iowa
- Contributors
- Diana L Huffaker (Editor) - Univ. of California, Los Angeles (United States)Holger Eisele (Editor) - Technische Univ. Berlin (Germany)
- Resource Type
- Conference proceeding
- Publication Details
- Proceedings of SPIE - The International Society for Optical Engineering, Vol.10114, pp.1011419-1011419-6
- Publisher
- SPIE
- DOI
- 10.1117/12.2267737
- ISSN
- 0277-786X
- eISSN
- 1996-756X
- Language
- English
- Date published
- 02/20/2017
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy; Iowa Technology Institute; Holden Comprehensive Cancer Center
- Record Identifier
- 9984197437802771
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