Conference proceeding
Ultrafast electron spin relaxation in 6.1-angstrom-lattice-constant semiconductors
Technical Digest. Summaries of papers presented at the Quantum Electronics and Laser Science Conference. Postconference Technical Digest (IEEE Cat. No.01CH37172), pp.208-209
2001
DOI: 10.1109/QELS.2001.962077
Abstract
Summary form only given. We describe ultrafast optical measurements of electron spin relaxation in InAs/GaSb superlattices with band gaps in the mid-infrared. Quantum structures comprised of semiconductors such as InAs and GaSb, with lattice constants of /spl sim/6.1-/spl Aring/, are currently being explored for application to a variety of advanced electronic and optoelectronic devices, including resonant-interband-tunneling diodes and mid-infrared lasers and detectors. The large spin-orbit coupling and interface asymmetry in these no-common-anion superlattices are expected to enhance the spin relaxation rates relative to, e.g., GaAs/Al(Ga)As heterostructures. We demonstrate that these factors lead to an unusual regime in which carrier spin relaxation occurs on a time scale comparable to energy relaxation.
Details
- Title: Subtitle
- Ultrafast electron spin relaxation in 6.1-angstrom-lattice-constant semiconductors
- Creators
- T.F. Boggess - University of IowaJ.T. Olesberg - University of IowaE. Altunkaya - University of IowaC. Yu - University of IowaM.E. Flatte - University of IowaW. Lau - University of IowaT.C. Hasenberg - University of IowaE.M. Shaw - University of Iowa
- Resource Type
- Conference proceeding
- Publication Details
- Technical Digest. Summaries of papers presented at the Quantum Electronics and Laser Science Conference. Postconference Technical Digest (IEEE Cat. No.01CH37172), pp.208-209
- Publisher
- IEEE
- DOI
- 10.1109/QELS.2001.962077
- Language
- English
- Date published
- 2001
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984428797002771
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