Conference proceeding
Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by few-cycle Terahertz pulses
2009 International Semiconductor Device Research Symposium, pp.1-2
12/2009
DOI: 10.1109/ISDRS.2009.5378213
Abstract
The exciton binding energy in GaAs-based quantum-well (QW) structures is in the range of ~10 meV, which falls in the terahertz (THz) regime. THz-induced nonlinear optical effects of excitons in QWs are of great interest because they provide new insights into the quantum coherence and wavepacket dynamics in semiconductors. This paper presents a time-resolved study to observe resonant interactions of strong narrowband THz pulses with coherent excitons in QWs, where the THz radiation is tuned near the 1s-2p excitonic transition and the THz pulse duration (~3 ps) is comparable with the exciton dephasing time.
Details
- Title: Subtitle
- Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by few-cycle Terahertz pulses
- Creators
- Yun-Shik Lee - Oregon State UniversityA.D. Jameson - Oregon State UniversityJ.L. Tomaino - Oregon State UniversityJ.P. Prineas - Dept. of Phys. & Astron., Univ. of Iowa, Iowa City, IA, USAJ.T. Steiner - Philipps University of MarburgM. Kira - Philipps University of MarburgS.W. Koch - Philipps University of Marburg
- Resource Type
- Conference proceeding
- Publication Details
- 2009 International Semiconductor Device Research Symposium, pp.1-2
- DOI
- 10.1109/ISDRS.2009.5378213
- Publisher
- IEEE
- Language
- English
- Date published
- 12/2009
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984428676202771
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