Near- to mid-IR (1-13  μm) III-V semiconductor lasers: introduction to the feature issue

Shamsul Arafin; Fatima Toor; Pengda Hong; Kaikai Xu

doi:10.1364/AO.56.00NIR1

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Editorial

Near- to mid-IR (1-13 μm) III-V semiconductor lasers: introduction to the feature issue

Shamsul Arafin, Fatima Toor, Pengda Hong and Kaikai Xu

Applied optics. Optical technology and biomedical optics, Vol.56(31), pp.NIR1-NIR2

11/01/2017

DOI: 10.1364/AO.56.00NIR1

PMID: 29091670

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Abstract

This feature issue reports on the most recent advances in the field of III-V semiconductor lasers emitting in the near- to mid-IR spectral regions, with a particular focus on devices with an emission wavelength range between 1 and 13 μm.

Details

Title: Subtitle: Near- to mid-IR (1-13 μm) III-V semiconductor lasers: introduction to the feature issue
Creators: Shamsul Arafin - University of California, Santa Barbara
Fatima Toor - University of Iowa
Pengda Hong - Onyx Optics
Kaikai Xu - University of Electronic Science and Technology of China
Resource Type: Editorial
Publication Details: Applied optics. Optical technology and biomedical optics, Vol.56(31), pp.NIR1-NIR2
DOI: 10.1364/AO.56.00NIR1
PMID: 29091670
ISSN: 1559-128X
eISSN: 2155-3165
Language: English
Date published: 11/01/2017
Academic Unit: Electrical and Computer Engineering; Iowa Technology Institute; Physics and Astronomy; Holden Comprehensive Cancer Center
Record Identifier: 9984197102202771

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