Journal article
512×512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices
IEEE journal of quantum electronics, Vol.49(9), pp.753-759
09/2013
DOI: 10.1109/JQE.2013.2272878
Abstract
Single element 33×33 μm 2 InAs/GaSb superlattice light-emitting diodes (SLEDs) operating at 77 K with peak emission at approximately 4.6 μm are demonstrated. A peak radiance of 2.2 W/cm 2 /sr was measured corresponding to an apparent temperature greater than 1350 K within the 3-5 μm band. A 48 μm pitch, 512 × 512 individually addressable LED array was fabricated from a nominally identical SLED wafer, hybridized with a read-in integrated circuit, and tested. The array exhibited a pixel yield greater than 95%.
Details
- Title: Subtitle
- 512×512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices
- Creators
- Dennis T Norton - University of IowaJonathon T Olesberg - University of IowaRodney T McGee - University of DelawareNicholas A Waite - University of DelawareJonathan Dickason - University of DelawareK. W Goossen - University of DelawareJohn Lawler - ENVIRONGerry Sullivan - Teledyne Sci. & Imaging, LLC, Thousand Oaks, CA, USAAmal Ikhlassi - Teledyne Sci. & Imaging, LLC, Thousand Oaks, CA, USAFouad Kiamilev - University of DelawareEdwin J Koerperick - ASL Anal., Inc., Coralville, IA, USALee M Murray - University of IowaJohn P Prineas - University of IowaThomas F Boggess - University of Iowa
- Resource Type
- Journal article
- Publication Details
- IEEE journal of quantum electronics, Vol.49(9), pp.753-759
- Publisher
- IEEE
- DOI
- 10.1109/JQE.2013.2272878
- ISSN
- 0018-9197
- eISSN
- 1558-1713
- Language
- English
- Date published
- 09/2013
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199780102771
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