Journal article
A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy
IEEE transactions on nuclear science, Vol.66(1), pp.428-436
01/01/2019
DOI: 10.1109/TNS.2018.2885300
Abstract
We demonstrate that a new technique, near-zero field magnetoresistance (NZFMR) spectroscopy, can explore radiation damage in a wide variety of devices in a proof-of-concept study. The technique has great potential for the study of atomic-scale mechanisms of radiation damage in 3-D integrated circuits. In our study, we explore radiation damage in structures relevant to 3-D integrated circuits, but not on 3-D test structures themselves. Five structures of great technological importance to 3-D integrated circuits are investigated. We utilize both NZFMR and electrically detected magnetic resonance to investigate radiation effects in these structures. The structures involved in this paper are planar silicon metal-oxide-semiconductor field-effect transistors, silicon-germanium alloy-based transistors, fin-based transistors, silicon dioxide-based flowable oxides, and low-k dielectrics. Our study indicates that NZFMR has great potential in radiation damage studies, with exceptional promise in systems in which more conventional resonance is not possible.
Details
- Title: Subtitle
- A New Analytical Tool for the Study of Radiation Effects in 3-D Integrated Circuits: Near-Zero Field Magnetoresistance Spectroscopy
- Creators
- James P. Ashton - Pennsylvania State UniversityStephen J. Moxim - Pennsylvania State UniversityPatrick M. Lenahan - Pennsylvania State UniversityColin G. McKay - Pennsylvania State UniversityRyan J. Waskiewicz - Pennsylvania State UniversityKenneth J. Myers - Pennsylvania State UniversityMichael E. Flatte - University of IowaNicholas J. Harmon - University of IowaChadwin D. Young - Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
- Resource Type
- Journal article
- Publication Details
- IEEE transactions on nuclear science, Vol.66(1), pp.428-436
- Publisher
- IEEE
- DOI
- 10.1109/TNS.2018.2885300
- ISSN
- 0018-9499
- eISSN
- 1558-1578
- Number of pages
- 9
- Grant note
- HDTRA1-18-0012 / Department of Defense, Defense Threat Reduction Agency; United States Department of Defense; Defense Threat Reduction Agency
- Language
- English
- Date published
- 01/01/2019
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428828802771
Metrics
1 Record Views