Journal article
A linearized technique in an All-MOS transconductance amplifier
Microelectronics Journal, Vol.43(12), pp.1023-1028
12/2012
DOI: 10.1016/j.mejo.2012.07.017
Abstract
A linearized technique in an all-MOS transconductance amplifier is presented. This proposed technique utilizes a simple source follower without the need of complex circuits. The linearization principle and the design methodology are demonstrated in this paper. The corresponding circuit has been fabricated in a 0.35μm CMOS technology, and its active chip area is 145.8×79.6μm2. From the experimental results, the proposed technique improves the nonlinearity error from 10.92% to 0.64% at a 3.3V supply voltage.
Details
- Title: Subtitle
- A linearized technique in an All-MOS transconductance amplifier
- Creators
- Ding-Lan ShenYu-Jung ChuHong-Wen Chen
- Resource Type
- Journal article
- Publication Details
- Microelectronics Journal, Vol.43(12), pp.1023-1028
- Publisher
- Elsevier Ltd
- DOI
- 10.1016/j.mejo.2012.07.017
- ISSN
- 0026-2692
- eISSN
- 1879-2391
- Language
- English
- Date published
- 12/2012
- Academic Unit
- Electrical and Computer Engineering
- Record Identifier
- 9984197905502771
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