Journal article
A semiconductor exciton memory cell based on a single quantum nanostructure
Nano letters, Vol.8(6), pp.1750-1755
06/01/2008
DOI: 10.1021/nl800911n
PMID: 18500845
Abstract
We demonstrate storage of excitons in a single nanostructure, a self-assembled quantum post, After generation, electrons and holes forming the excitons are separated by an electric field toward opposite ends of the quantum post inhibiting their radiative recombination. After a defined time, the spatially indirect excitons are reconverted to optically active direct excitons by switching the electric field. The emitted light of the stored exciton is detected in the limit of a single nanostructure and storage times exceeding 30 msec are demonstrated. We identify a slow tunneling of the electron out of the quantum post as the dominant loss mechanism by comparing the field dependent temporal decay of the storage signal to models for this process and radiative losses.
Details
- Title: Subtitle
- A semiconductor exciton memory cell based on a single quantum nanostructure
- Creators
- Hubert J. Krenner - University of California, Santa BarbaraCraig E. Pryor - University of IowaJun He - University of California, Santa BarbaraPierre M. Petroff - University of California, Santa Barbara
- Resource Type
- Journal article
- Publication Details
- Nano letters, Vol.8(6), pp.1750-1755
- DOI
- 10.1021/nl800911n
- PMID
- 18500845
- NLM abbreviation
- Nano Lett
- ISSN
- 1530-6984
- eISSN
- 1530-6992
- Publisher
- Amer Chemical Soc
- Number of pages
- 6
- Language
- English
- Date published
- 06/01/2008
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984428811702771
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