Journal article
Active Region Cascading for Improved Performance in InAs–GaSb Superlattice LEDs
IEEE journal of quantum electronics, Vol.44(12), pp.1242-1247
12/2008
DOI: 10.1109/JQE.2008.2003145
Abstract
Cascading of active regions in InAs-GaSb superlattice light-emitting diodes (LEDs) grown by molecular beam epitaxy is demonstrated as an effective means of increasing optical emission. Devices were fabricated into 120 × 120 μm2 mesas to demonstrate suitability for high resolution projection systems. Devices with 1, 4, 8, and 16 stages were designed for midwave infrared emission at 3.8 μm operating at 77 K, and quasi-continuous-wave output powers in excess of 900 μW from a 16-stage LED have been demonstrated. External quantum efficiency is shown to improve substantially with cascading, approaching 10% for a 16-stage device. © 2008 IEEE.
Details
- Title: Subtitle
- Active Region Cascading for Improved Performance in InAs–GaSb Superlattice LEDs
- Creators
- Edwin J Koerperick - University of IowaJonathon T Olesberg - University of IowaJames L Hicks - Arkansas State UniversityJohn P Prineas - University of IowaThomas F Boggess - University of Iowa
- Resource Type
- Journal article
- Publication Details
- IEEE journal of quantum electronics, Vol.44(12), pp.1242-1247
- DOI
- 10.1109/JQE.2008.2003145
- ISSN
- 0018-9197
- eISSN
- 1558-1713
- Language
- English
- Date published
- 12/2008
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199722002771
Metrics
4 Record Views