Journal article
All-electrical control of single ion spins in a semiconductor
Physical review letters, Vol.97(10), pp.106803-106803
09/08/2006
DOI: 10.1103/PhysRevLett.97.106803
PMID: 17025843
Abstract
We propose a method for all-electrical manipulation of single ion spins substituted into a semiconductor. Mn ions with a bound hole in GaAs form a natural example. Direct electrical manipulation of the ion spin is possible, because electric fields manipulate the orbital wave function of the hole, and through the spin-orbit coupling the spin is reoriented as well. Coupling ion spins can be achieved using gates to control the size of the hole wave function. Coherent manipulation of ionic spins may find applications in high-density storage and in scalable coherent or quantum information processing.
Details
- Title: Subtitle
- All-electrical control of single ion spins in a semiconductor
- Creators
- Jian-Ming TangJeremy Levy - University of PittsburghMichael E. Flatte - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review letters, Vol.97(10), pp.106803-106803
- DOI
- 10.1103/PhysRevLett.97.106803
- PMID
- 17025843
- NLM abbreviation
- Phys Rev Lett
- ISSN
- 0031-9007
- eISSN
- 1079-7114
- Publisher
- Amer Physical Soc
- Number of pages
- 4
- Language
- English
- Date published
- 09/08/2006
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428680802771
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