Journal article
All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices
Applied physics letters, Vol.102(20), p.202101
05/20/2013
DOI: 10.1063/1.4807433
Abstract
Time-resolved differential transmission measurements were used to investigate vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices (T2SLs). By optically generating excess carriers near one end of the mid-wave T2SL and measuring the transit time to a thin, lower-bandgap T2SL at the other end, the time-of-flight of vertically diffusing carriers was measured. Through investigation of both unintentionally doped and p-type T2SLs, the vertical hole and electron diffusion coefficients were measured to be 0.04 ± 0.03 cm2/s and 4.7 ± 0.5 cm2/s, corresponding to vertical mobilities of 6 ± 5 cm2/Vs and 700 ± 80 cm2/Vs, respectively, at a temperature of 77 K.
Details
- Title: Subtitle
- All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices
- Creators
- B. V OlsonL. M MurrayJ. P PrineasM. E FlattéJ. T OlesbergT. F Boggess
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.102(20), p.202101
- DOI
- 10.1063/1.4807433
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Language
- English
- Date published
- 05/20/2013
- Academic Unit
- Physics and Astronomy; Electrical and Computer Engineering
- Record Identifier
- 9984199742402771
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