Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

J. K. Garleff; C. Celebi; W. Van Roy; J. -M. Tang; M. E. Flatte; P. M. Koenraad

doi:10.1103/PhysRevB.78.075313

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Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

Journal article

Peer reviewed

Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

J. K. Garleff, C. Celebi, W. Van Roy, J. -M. Tang, M. E. Flatte and P. M. Koenraad

Physical review. B, Condensed matter and materials physics, Vol.78(7), pp.075313-8-Jan

08/01/2008

DOI: 10.1103/PhysRevB.78.075313

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Abstract

Cross-sectional scanning tunneling microscopy (STM) measurements on molecular beam epitaxy grown Mn doped GaAs(110) at 5 and 77 K are presented. The enhanced mechanical stability of the STM at low temperature allows a detailed study of the electronic contrast of Mn atoms in the GaAs(110) surface. According to reproducible and distinguishable contrast patterns of single Mn atoms, we present statistical evidence for a layer by layer identification of Mn atoms embedded in the first few monatomic layers of the crystal. A comparison with a bulklike theoretical approach reveals a semiquantitative agreement with the measurements. Remaining differences between theory and experiment indicate the influence of the surface as an important factor to understand the contrast of impurities close to the surface. Furthermore, we report the injection of transition-metal atoms into the surface. Finally, reproducible complexes consisting of a surface Mn and an adsorbate atom are found and manipulated.

Materials Science

Materials Science, Multidisciplinary

Physical Sciences

Physics

Physics, Applied

Physics, Condensed Matter

Science & Technology

Technology

Details

Title: Subtitle: Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy
Creators: J. K. Garleff - Eindhoven University of Technology
C. Celebi - Eindhoven University of Technology
W. Van Roy - Imec
J. -M. Tang - University of New Hampshire
M. E. Flatte - University of Iowa
P. M. Koenraad - Eindhoven University of Technology
Resource Type: Journal article
Publication Details: Physical review. B, Condensed matter and materials physics, Vol.78(7), pp.075313-8-Jan
DOI: 10.1103/PhysRevB.78.075313
NLM abbreviation: Phys Rev B Condens Matter Mater Phys
ISSN: 1098-0121
eISSN: 1550-235X
Publisher: American Physical Society
Number of pages: 8
Grant note: 6631 / STW-VICI AS-PRINT 10001520 / FOM; FOM (The Netherlands)
Language: English
Date published: 08/01/2008
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984429035802771

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