Journal article
Auger recombination in narrow-gap semiconductor superlattices incorporating antimony
Journal of applied physics, Vol.92(12), pp.7311-7316
12/15/2002
DOI: 10.1063/1.1521255
Abstract
A comparison is performed between measured and calculated Auger recombination rates for four different narrow-gap superlattices based on the InAs/GaSb/AlSb material system. The structures are designed for optical or electrical injection for mid-infrared laser applications, with wavelengths ranging from 3.4 to 4.1 mum. The electronic band structures are computed employing an accurate 14-band restricted basis set (superlattice K.p) methodology that utilizes experimental information about the low-energy electronic structure of the bulk constituents. The superlattice band structures and their associated matrix elements are directly employed to compute Auger recombination rates. Varying amounts of Auger recombination suppression are displayed by the various superlattices as compared to bulk mid-infrared systems. The greatest disagreement between theory and experiment is shown for the structure predicted to have the most Auger suppression, suggesting the suppression is sensitive either to theoretical or growth uncertainties. (C) 2002 American Institute of Physics.
Details
- Title: Subtitle
- Auger recombination in narrow-gap semiconductor superlattices incorporating antimony
- Creators
- C H Grein - University of Illinois ChicagoM E Flatte - University of IowaJ T Olesberg - University of IowaS A Anson - University of IowaL Zhang - University of IowaT F Boggess - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of applied physics, Vol.92(12), pp.7311-7316
- DOI
- 10.1063/1.1521255
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Publisher
- Amer Inst Physics
- Number of pages
- 6
- Language
- English
- Date published
- 12/15/2002
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429049102771
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