Journal article
Band-Edge Diagrams of Core-Shell Semiconductor Dots
Journal of physical chemistry. C, Vol.115(22), pp.10931-10939
2011
DOI: 10.1021/jp1094195
Abstract
We have calculated band-edge diagrams for spherical core shell nanocrystal quantum dots for all combinations of AlN, GaN, and InN, as well as all combinations of AlP, GaP, AlAs, GaAs, InP, In As, AlSb, GaSb, and LnSb, as a function of core radius, with the outer radius of the shell held fixed. We have calculated the Gamma- and the X-conduction band minima, the valence band maximum, and the effective masses using strain-dependent eight-band kp theory, with a linear continuum model for the strain. We have found all the band alignments that may occur, and identified all combinations where one material becomes metallic due to a negative gap. Structures which are suitable for biological applications have been identified. We provide a figure which allows easy calculation of the confinement energy using a single band model.
Details
- Title: Subtitle
- Band-Edge Diagrams of Core-Shell Semiconductor Dots
- Creators
- Mats-Erik Pistol - Solid State PhysicsC. E Pryor - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of physical chemistry. C, Vol.115(22), pp.10931-10939
- DOI
- 10.1021/jp1094195
- NLM abbreviation
- J Phys Chem C Nanomater Interfaces
- ISSN
- 1932-7447
- eISSN
- 1932-7455
- Publisher
- American Chemical Society
- Language
- English
- Date published
- 2011
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199737402771
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