Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

B. Khanbabaee; G. Bussone; J. V. Knutsson; I. Geijselaers; C. E. Pryor; T. Rieger; N. Demarina; D. Gruetzmacher; M. I. Lepsa; R. Timm; U. Pietsch

doi:10.1063/1.4964600

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Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

Journal article

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Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy

B. Khanbabaee, G. Bussone, J. V. Knutsson, I. Geijselaers, C. E. Pryor, T. Rieger, N. Demarina, D. Gruetzmacher, M. I. Lepsa, R. Timm, …

Journal of applied physics, Vol.120(14), p.145703

10/14/2016

DOI: 10.1063/1.4964600

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Abstract

Unique electronic properties of semiconductor heterostructured nanowires make them useful for future nano-electronic devices. Here, we present a study of the band bending effect at the heterointerface of GaAs/InAs core/shell nanowires by means of synchrotron based X-ray photoelectron spectroscopy. Different Ga, In, and As core-levels of the nanowire constituents have been monitored prior to and after cleaning from native oxides. The cleaning process mainly affected the As-oxides and was accompanied by an energy shift of the core-level spectra towards lower binding energy, suggesting that the As-oxides turn the nanowire surfaces to n-type. After cleaning, both As and Ga core-levels revealed an energy shift of about -0.3 eV for core/shell compared to core reference nanowires. With respect to depth dependence and in agreement with calculated strain distribution and electron quantum confinement, the observed energy shift is interpreted by band bending of core-levels at the heterointerface between the GaAs nanowire core and the InAs shell. Published by AIP Publishing.

Physical Sciences

Physics

Physics, Applied

Science & Technology

Details

Title: Subtitle: Band bending at the heterointerface of GaAs/InAs core/shell nanowires monitored by synchrotron X-ray photoelectron spectroscopy
Creators: B. Khanbabaee - University of Siegen
G. Bussone - University of Siegen
J. V. Knutsson - Lund University
I. Geijselaers - Lund University
C. E. Pryor - University of Iowa
T. Rieger - Forschungszentrum Jülich
N. Demarina - Forschungszentrum Jülich
D. Gruetzmacher - Forschungszentrum Jülich
M. I. Lepsa - Forschungszentrum Jülich
R. Timm - Lund University
U. Pietsch - University of Siegen
Resource Type: Journal article
Publication Details: Journal of applied physics, Vol.120(14), p.145703
Publisher: Amer Inst Physics
DOI: 10.1063/1.4964600
ISSN: 0021-8979
eISSN: 1089-7550
Number of pages: 8
Grant note: Swedish Research Council (VR); Swedish Research Council Pi 217/38 / DFG; German Research Foundation (DFG) Knut and Alice Wallenberg Foundation; Knut & Alice Wallenberg Foundation
Language: English
Date published: 10/14/2016
Academic Unit: Physics and Astronomy
Record Identifier: 9984428812002771

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