Journal article
Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
Physical review. B, Condensed matter and materials physics, Vol.72(20), pp.205311.1-205311.11
01/05/2005
DOI: 10.1103/PhysRevB.72.205311
Abstract
We have calculated band-edge energies for most combinations of zinc blende AlN, GaN, InN, GaP, GaAs, InP, InAs, GaSb, and InSb in which one material is strained to the other. Calculations were done for three different geometries (quantum wells, wires, and dots) and mean effective masses were computed in order to estimate confinement energies. For quantum wells, we have also calculated band-edges for ternary alloys. Energy gaps, including confinement, may be easily and accurately estimated using band energies and a simple effective mass approximation, yielding excellent agreement with experimental results. By calculating all material combinations we have identified interesting material combinations, such as artificial donors, that have not been experimentally realized. The calculations were perfomed using strain-dependent k center dot p theory and provide a comprehensive overview of band structures for strained heterostructures.
Details
- Title: Subtitle
- Band-edge diagrams for strained III-V semiconductor quantum wells, wires, and dots
- Creators
- C E Pryor - University of IowaMats-Erik Pistol - Lund University
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter and materials physics, Vol.72(20), pp.205311.1-205311.11
- DOI
- 10.1103/PhysRevB.72.205311
- NLM abbreviation
- Phys Rev B Condens Matter Mater Phys
- ISSN
- 1098-0121
- eISSN
- 1550-235X
- Publisher
- American Physical Society
- Language
- English
- Date published
- 01/05/2005
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984428796402771
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