Band structure engineering of superlattice-based short-, mid-, and long-wavelength infrared avalanche photodiodes for improved impact ionization rates

K A El-Rub; C H Grein; M E Flatte; H Ehrenreich

doi:10.1063/1.1503390

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Band structure engineering of superlattice-based short-, mid-, and long-wavelength infrared avalanche photodiodes for improved impact ionization rates

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Band structure engineering of superlattice-based short-, mid-, and long-wavelength infrared avalanche photodiodes for improved impact ionization rates

K A El-Rub, C H Grein, M E Flatte and H Ehrenreich

Journal of applied physics, Vol.92(7), pp.3771-3777

10/01/2002

DOI: 10.1063/1.1503390

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Abstract

We study the effects of the electronic band structure on the hole- and electron-initiated impact ionization in Sb-based superlattice avalanche photodiodes. Earlier calculations have revealed that bulk alloy AlGaSb avalanche photodiodes with alloy composition near the resonance between the energy gap and the spin-orbit splitting have an enhanced hole to electron impact ionization coefficient ratio for a low electric field but not for a high electric field. The absence of an enhancement under high fields is due to carrier heating spreading the hole distribution in the splitoff band. A strategy to extend this type of enhancement to high fields in a superlattice involves band engineering the superlattice to place flat bands at approximately one energy gap below the top of the valence band. This prevents holes from spreading in energy and hence gives rise to strong hole-initiated impact ionization. Quantitative results are presented for short-infrared AlAs/InGaAs/AlAs/InGaSb, midinfrared InAs/InGaSb/AlSb, and long-infrared InAs/InGaSb/AlSb superlattices. (C) 2002 American Institute of Physics.

Physical Sciences

Physics

Physics, Applied

Science & Technology

Details

Title: Subtitle: Band structure engineering of superlattice-based short-, mid-, and long-wavelength infrared avalanche photodiodes for improved impact ionization rates
Creators: K A El-Rub
C H Grein - University of Illinois at Chicago
M E Flatte - Harvard University
H Ehrenreich - Jordan University of Science and Technology
Resource Type: Journal article
Publication Details: Journal of applied physics, Vol.92(7), pp.3771-3777
Publisher: Amer Inst Physics
DOI: 10.1063/1.1503390
ISSN: 0021-8979
eISSN: 1089-7550
Number of pages: 7
Language: English
Date published: 10/01/2002
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984428819302771

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