Journal article
Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices
Journal of applied physics, Vol.119(21), 215705
06/07/2016
DOI: 10.1063/1.4953386
Abstract
A time- and temperature-dependent differential-transmission technique is used to study the bandgap dependence of Auger recombination in Ga-free InAs/InAsSb type-II superlattices (T2SLs). The bandgap energies are varied between 290 meV (4.3 μm) and 135 meV (9.2 μm) by engineering the layer thickness and alloy Sb concentration. A long-wave infrared structure with 135 meV bandgap energy is found to have an Auger coefficient of 9 × 10−26 cm6/s at 77 K. The measured Auger coefficients increase with decreasing bandgap from approximately 3 × 10−27 cm6/s for mid-wave infrared bandgaps to 2 × 10−25 cm6/s for long-wave infrared bandgaps at 77 K. The measured T2SL Auger coefficients are compared to predicted Auger coefficients for HgCdTe
Details
- Title: Subtitle
- Bandgap and temperature dependence of Auger recombination in InAs/InAsSb type-II superlattices
- Creators
- Y Aytac - University of IowaB. V Olson - Sandia National LaboratoriesJ. K Kim - Sandia National LaboratoriesE. A Shaner - Sandia National LaboratoriesS. D Hawkins - Sandia National LaboratoriesJ. F Klem - Sandia National LaboratoriesJ Olesberg - University of IowaM. E Flatté - University of IowaT. F Boggess - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Journal of applied physics, Vol.119(21), 215705
- DOI
- 10.1063/1.4953386
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Publisher
- American Institute of Physics
- Grant note
- DOI: 10.13039/100000015, name: U.S. Department of Energy, award: DE-AC04-94AL85000
- Language
- English
- Date published
- 06/07/2016
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984199838902771
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