Journal article
Calculation of Landau levels in semiconductor quantum dots in a high magnetic field and at a high optical excitation
Physical review. B, Condensed matter and materials physics, Vol.58(11), pp.6744-6747
09/15/1998
DOI: 10.1103/PhysRevB.58.6744
Abstract
Landau-level formations are studied theoretically for highly optically populated InP strained self-organized quantum dots for magnetic fields below 45 T. A self-consistent Hartree calculation is performed in real space with the higher-order finite difference method. A transition of the discrete states due to a potential confinement at 0 T to Landau-level-like structures for high magnetic fields is demonstrated.
Details
- Title: Subtitle
- Calculation of Landau levels in semiconductor quantum dots in a high magnetic field and at a high optical excitation
- Creators
- S Nomura - Lund UniversityL Samuelson - Lund UniversityC Pryor - Lund UniversityM E Pistol - Lund UniversityM Stopa - RIKENK Uchida - The University of TokyoN Miura - The University of TokyoT Sugano - RIKENY Aoyagi - Lund University
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter and materials physics, Vol.58(11), pp.6744-6747
- DOI
- 10.1103/PhysRevB.58.6744
- NLM abbreviation
- Phys Rev B Condens Matter Mater Phys
- ISSN
- 1098-0121
- eISSN
- 1550-235X
- Publisher
- American Physical Society
- Number of pages
- 4
- Language
- English
- Date published
- 09/15/1998
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984428681202771
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