Journal article
Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core–Shell Nanowires Grown on Silicon
Nano letters, Vol.19(7), pp.4272-4278
07/10/2019
DOI: 10.1021/acs.nanolett.9b00517
PMID: 31244233
Abstract
We report on carrier recombination within self-catalyzed InAs/InAlAs core–shell nanowires (NWs), disentangling recombination rates at the ends, sidewalls, and interior of the NWs. Ultrafast optical pump–probe spectroscopy measurements were performed from 77293 K on the free-standing, variable-sized NWs grown on lattice-mismatched Si(111) substrates, independently varying NW length and diameter. We found NW carrier recombination in the interior is nontrivial compared to the surface recombination, especially at 293 K. Surface recombination is dominated by carrier recombination at the NW sidewall, while contributions from the highly strained, impure NW base are negligible.
Details
- Title: Subtitle
- Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core–Shell Nanowires Grown on Silicon
- Creators
- Kailing ZhangXinxin LiWeitao DaiFatima ToorJ. P Prineas
- Resource Type
- Journal article
- Publication Details
- Nano letters, Vol.19(7), pp.4272-4278
- Publisher
- American Chemical Society
- DOI
- 10.1021/acs.nanolett.9b00517
- PMID
- 31244233
- ISSN
- 1530-6984
- eISSN
- 1530-6992
- Grant note
- DOI: 10.13039/100000148, name: Division of Electrical, Communications and Cyber Systems, award: EPM-1608714
- Language
- English
- Date published
- 07/10/2019
- Academic Unit
- Electrical and Computer Engineering; Iowa Technology Institute; Physics and Astronomy; Holden Comprehensive Cancer Center
- Record Identifier
- 9984197078002771
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