Journal article
Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well
Applied physics letters, Vol.68(15), pp.2135-2137
04/08/1996
DOI: 10.1063/1.115609
Abstract
We have used the 830 nm, subpicosecond output of a mode-locked Ti:sapphire laser, together with subpicosecond 3.55 mu m pulses from asynchronously pumped optical parametric oscillator, to perform room-temperature, time-resolved, differential transmission measurements on a multiple quantum well structure with AlGaSb barriers and GaInSb/InAs superlattice wells. From these measurements, we have determined a Shockley-Read-Hall rate of 2.4X10(8) s(-1) and an Auger coefficient of 7x10(-27) cm(6)/s. In addition, we estimate the carrier capture efficiency into the wells cm to be similar to 52% and have demonstrated that carrier cooling, cross-well transport, and capture are complete within similar to 10 ps after excitation. (C) 1996 American Institute of Physics.
Details
- Title: Subtitle
- Carrier recombination dynamics in a (GaInSb/InAs)/AlGaSb superlattice multiple quantum well
- Creators
- S W McCahon - University of IowaS A Anson - University of IowaD J Jang - University of IowaM E Flatte - University of IowaT F Boggess - University of IowaD H Chow - HRL Laboratories (United States)T C Hasenberg - HRL Laboratories (United States)C H Grein - University of Illinois Chicago
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.68(15), pp.2135-2137
- DOI
- 10.1063/1.115609
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Publisher
- Amer Inst Physics
- Number of pages
- 3
- Language
- English
- Date published
- 04/08/1996
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429043402771
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