Journal article
Carrier recombination lifetime characterization of molecular beam epitaxially grown HgCdTe
Applied physics letters, Vol.93(19), pp.192111-192111-3
11/10/2008
DOI: 10.1063/1.3001935
Abstract
Carrier recombination lifetime measurements and analyses based on Shockley-Read-Hall, radiative, and Auger recombination mechanisms were utilized to characterize the material quality of HgCdTe grown by molecular beam epitaxy. The Auger recombination mechanism employed in this analysis is in the theoretical framework according to Beattie and Landsberg [Proc. R. Soc. London, Ser. A 249, 16 (1959)], which we independently re-evaluated using the electronic band structures computed with a 14-band k center dot p methodology and direct evaluations of the transition rates. The Levenberg-Marquette method was used to fit the temperature-dependent carrier recombination lifetimes as measured by the photoconductive decay technique. Based on the above methods, carrier recombination lifetime measurements were developed as a routine characterization technique.
Details
- Title: Subtitle
- Carrier recombination lifetime characterization of molecular beam epitaxially grown HgCdTe
- Creators
- Y. Chang - University of Illinois at ChicagoC. H. Grein - University of Illinois at ChicagoJ. Zhao - University of Illinois at ChicagoC. R. Becker - University of Illinois at ChicagoM. E. Flatte - University of IowaP.-K. Liao - New Infrared TechnologiesF. Aqariden - New Infrared TechnologiesS. Sivananthan - University of Illinois at Chicago
- Resource Type
- Journal article
- Publication Details
- Applied physics letters, Vol.93(19), pp.192111-192111-3
- Publisher
- Amer Inst Physics
- DOI
- 10.1063/1.3001935
- ISSN
- 0003-6951
- eISSN
- 1077-3118
- Number of pages
- 3
- Grant note
- DAAD190110462 / ARO W911NF-05C0090/07C0001 / EPIR Technologies, Inc
- Language
- English
- Date published
- 11/10/2008
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429051302771
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