Journal article
Carrier recombination rates in narrow-gap I n A s / G a 1 − x In x Sb -based superlattices
Physical review. B, Condensed matter, Vol.59(8), pp.5745-5750
02/1999
DOI: 10.1103/PhysRevB.59.5745
Abstract
We present a comparison of theoretical calculations and experimental measurements of the Auger recombination rate in a narrow-gap semiconductor superlattice with a complex band structure. The calculations and measurements indicate that the rate depends on density as (Formula presented) for low density, and changes to an (Formula presented) dependence when the electrons and holes become degenerate. The calculations are the first to incorporate superlattice umklapp processes, which contribute about half of the total rate and substantially improve the agreement with experiment. © 1999 The American Physical Society.
Details
- Title: Subtitle
- Carrier recombination rates in narrow-gap I n A s / G a 1 − x In x Sb -based superlattices
- Creators
- Michael E. Flatté - University of IowaC. H. Grein - University of Illinois ChicagoT. C. Hasenberg - University of IowaS. A. Anson - University of IowaD.-J. JangJ. T. Olesberg - University of IowaThomas F. Boggess - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter, Vol.59(8), pp.5745-5750
- DOI
- 10.1103/PhysRevB.59.5745
- NLM abbreviation
- Phys Rev B Condens Matter
- ISSN
- 0163-1829
- eISSN
- 1095-3795
- Publisher
- American Physical Society
- Alternative title
- Carrier recombination rates in narrow-gap ${\mathrm{I}\mathrm{n}\mathrm{A}\mathrm{s}/\mathrm{G}\mathrm{a}}_{1\ensuremath{-}x}{\mathrm{In}}_{x}\mathrm{Sb}$-based superlattices
- Language
- English
- Date published
- 02/1999
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984428805202771
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