Journal article
Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared
IEEE journal of quantum electronics, Vol.47(1), pp.50-54
01/2011
DOI: 10.1109/JQE.2010.2072492
Abstract
Superlattice InAs/GaSb light-emitting diodes with peak emission wavelength of 8.6 μm and output power approaching 190 μW at 77 K from a 120 × 120 μm 2 mesa are demonstrated. Output power in excess of 600 μ.W was demonstrated from a 520 × 520 μm mesa at 1 A drive current and 50% duty cycle. Devices were grown by molecular beam epitaxy on lightly n-doped GaSb substrates and employed a 16-stage cascaded active region configuration to improve current efficiency and increase optical output. Emitting regions were coupled by semi-metallic tunnel junctions consisting of a p-GaSb layer and a thickness-graded InAs/GaSb superlattice stack.
Details
- Title: Subtitle
- Cascaded Superlattice InAs/GaSb Light-Emitting Diodes for Operation in the Long-Wave Infrared
- Creators
- Edwin J Koerperick - University of IowaDennis T Norton - University of IowaJonathon T Olesberg - University of IowaBenjamin V Olson - University of IowaJohn P Prineas - University of IowaThomas F Boggess - University of Iowa
- Resource Type
- Journal article
- Publication Details
- IEEE journal of quantum electronics, Vol.47(1), pp.50-54
- Publisher
- IEEE
- DOI
- 10.1109/JQE.2010.2072492
- ISSN
- 0018-9197
- eISSN
- 1558-1713
- Language
- English
- Date published
- 01/2011
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984199949902771
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