Journal article
Characterisation of the SilSpin etch-back process for nanolithography with CHF3 and O2 gas chemistry
International journal of nanomanufacturing, Vol.2(4), pp.305-318
01/01/2008
DOI: 10.1504/IJNM.2008.022558
Abstract
This study characterises the SilSpin™ etch-back process within the reverse tone Step and Flash Imprint Lithography (SFIL/R). Currently, the S-FIL/R operational specifications to etch the SilSpin material require a reactive ion etching platform which etches the polymers at a slower rate than a high density plasma reactor. The goal was to develop empirical etch models and determine the process parameters in the etching process using a magnetically enhanced reactive ion etching reactor with CHF3 and O2 gas chemistry. The experimental approach taken uses a 24 factorial design to characterise the relationships between the process factors and etch responses. The factors in the design are: reactor pressure, power, gas flow and magnetic flux. The factors and their interaction levels to uniformly etch the SilSpin were determined along with the best set of operating parameters. Using these results in conjunction with response surface methodology enabled the development of empirical etch behaviour models.
Details
- Title: Subtitle
- Characterisation of the SilSpin etch-back process for nanolithography with CHF3 and O2 gas chemistry
- Creators
- Hector Carrion-Gonzalez - Pennsylvania State UniversityMichael A Rogosky - Pennsylvania State UniversityHarriet Black Nembhard - Pennsylvania State UniversitySanjay Joshi - Pennsylvania State University
- Resource Type
- Journal article
- Publication Details
- International journal of nanomanufacturing, Vol.2(4), pp.305-318
- Publisher
- Inderscience Publishers
- DOI
- 10.1504/IJNM.2008.022558
- ISSN
- 1746-9392
- eISSN
- 1746-9406
- Language
- English
- Date published
- 01/01/2008
- Academic Unit
- Engineering Administration; Industrial and Systems Engineering
- Record Identifier
- 9984187074802771
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