Journal article
Comparison of linewidth enhancement factors in midinfrared active region materials
Journal of applied physics, Vol.87(10), pp.7164-7168
05/15/2000
DOI: 10.1063/1.372964
Abstract
We report calculations of the linewidth enhancement factor for five midinfrared active region materials. The linewidth enhancement factors for two type-I quantum wells based on InAsSb are 2.5 and 5.4, which represent a reduction of up to a factor of 2.6 with respect to bulk InAs0.91Sb0.09. However, active region materials based on the type-II, InAs/GaInSb system have linewidth enhancement factors near 1.0, which is a factor of 2-5 reduction compared to the type-I quantum wells. The reduction of the linewidth enhancement factor is associated with both a reduction of the mismatch between the conduction and valence band densities of states and the presence of conduction band dispersion. We describe an additional optimization that is possible in the type-II materials: Carefully placed intersubband absorption features can be used to further reduce the linewidth enhancement factor. We show that linewidth enhancement values as low as 0.3 can be obtained in the type-II superlattices when fabricated into a distributed feedback structure. (C) 2000 American Institute of Physics. [S0021-8979(00)07009-2].
Details
- Title: Subtitle
- Comparison of linewidth enhancement factors in midinfrared active region materials
- Creators
- J T OlesbergM E FlatteT F Boggess
- Resource Type
- Journal article
- Publication Details
- Journal of applied physics, Vol.87(10), pp.7164-7168
- Publisher
- Amer Inst Physics
- DOI
- 10.1063/1.372964
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Number of pages
- 5
- Language
- English
- Date published
- 05/15/2000
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984429055402771
Metrics
1 Record Views