Journal article
Comparison of two methods for describing the strain profiles in quantum dots
Journal of Applied Physics, Vol.83(5), pp.2548-2554
03/01/1998
DOI: 10.1063/1.366631
Abstract
The electronic structure of interfaces between lattice-mismatched semiconductors is sensitive to the strain. We compare two approaches for calculating such inhomogeneous strain{emdash}continuum elasticity [(CE), treated as a finite difference problem] and atomistic elasticity. While for {ital small} strain the two methods must agree, for the large strains that exist between lattice-mismatched III-V semiconductors (e.g., 7{percent} for InAs/GaAs outside the linearity regime of CE) there are discrepancies. We compare the strain profile obtained by both approaches (including the approximation of the correct C{sub 2} symmetry by the C{sub 4} symmetry in the CE method) when applied to C{sub 2}-symmetric InAs pyramidal dots capped by GaAs. {copyright} {ital 1998 American Institute of Physics.}
Details
- Title: Subtitle
- Comparison of two methods for describing the strain profiles in quantum dots
- Creators
- C. Pryor - Lund UniversityJ. KimL.W. WangA.J. WilliamsonA. Zunger - National Laboratory of the Rockies
- Resource Type
- Journal article
- Publication Details
- Journal of Applied Physics, Vol.83(5), pp.2548-2554
- DOI
- 10.1063/1.366631
- ISSN
- 0021-8979
- eISSN
- 1089-7550
- Language
- English
- Date published
- 03/01/1998
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984428667302771
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