Journal article
Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope
Physical review. B, Condensed matter and materials physics, Vol.87(7), 075421
02/2013
DOI: 10.1103/PhysRevB.87.075421
Abstract
We demonstrate that a scanning tunneling microscope tip can be used to manipulate the tightly bound core (d-electron) state of single Fe ions embedded in GaAs. Increasing tip-sample voltage removes one d electron from the core of a single Fe, changing the dopant from the (Fe2+)- ionized acceptor state to the (Fe3+)0 isoelectronic state, which alters the spin moment and dramatically modifies the measured local electronic contrast in topographic maps of the surface. Evidence of internal transitions among the d states of the Fe core is also seen in topographic maps where dark anisotropic features emerge from the interference between two paths: the direct tip-sample tunneling and tunneling which excites a d-state core exciton of the Fe dopant. © 2013 American Physical Society.
Details
- Title: Subtitle
- Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope
- Creators
- J Bocquel - Photonics (United States)V. R KortanC ŞahinR. P CampionB. L GallagherM. E Flatté - Photonics (United States)P. M Koenraad - Photonics (United States)
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Condensed matter and materials physics, Vol.87(7), 075421
- DOI
- 10.1103/PhysRevB.87.075421
- NLM abbreviation
- Phys Rev B Condens Matter Mater Phys
- ISSN
- 1098-0121
- eISSN
- 1550-235X
- Publisher
- American Physical Society
- Language
- English
- Date published
- 02/2013
- Academic Unit
- Electrical and Computer Engineering; Physics and Astronomy
- Record Identifier
- 9984199923402771
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