Dual-step laser ablation and polishing for high-quality microgrooves in low-k wafer

Youngchul Kwon; Hao Fu; Mohammad Mohammadzadeh Sanandaji; Mohammad Ikram Haider; Avik Samanta; Benxin Wu; Hongtao Ding

doi:10.1016/j.mfglet.2026.06.009

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Dual-step laser ablation and polishing for high-quality microgrooves in low-k wafer

Journal article

Peer reviewed

Dual-step laser ablation and polishing for high-quality microgrooves in low-k wafer

Youngchul Kwon, Hao Fu, Mohammad Mohammadzadeh Sanandaji, Mohammad Ikram Haider, Avik Samanta, Benxin Wu and Hongtao Ding

Manufacturing letters, Vol.49, pp.25-31

09/2026

DOI: 10.1016/j.mfglet.2026.06.009

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Abstract

High-quality microgrooves are essential for wafer dicing of low-k dielectric stacks, where back-end-of-line layers are prone to thermal and mechanical damage. This work introduces a dual-step laser approach that combines UV nanosecond ablation with a low-fluence polishing pass to improve groove integrity. The ablation step defines the microgroove geometry, while the polishing step induces localized remelting to remove recast and microcracks and reduce roughness. Experiments on silicon wafers, used as a model substrate to isolate laser–material interactions relevant to low-k dicing show that a polishing fluence of 10.6 J/cm2 significantly lowers surface roughness by up to 70 % without additional ablation. Profilometry and SEM confirm smoother groove bottoms and cleaner sidewalls. The method offers a scalable solution for producing high-quality microgrooves in low-k wafer dicing.

Laser grooving

Laser polishing

Low-k dielectric stacks

Wafer dicing

Details

Title: Subtitle: Dual-step laser ablation and polishing for high-quality microgrooves in low-k wafer
Creators: Youngchul Kwon - University of Iowa
Hao Fu - Laser Operations (United States)
Mohammad Mohammadzadeh Sanandaji - University of Iowa
Mohammad Ikram Haider - University of Iowa
Avik Samanta - University of South Florida
Benxin Wu - Purdue University West Lafayette
Hongtao Ding - University of Iowa
Resource Type: Journal article
Publication Details: Manufacturing letters, Vol.49, pp.25-31
DOI: 10.1016/j.mfglet.2026.06.009
ISSN: 2213-8463
eISSN: 2213-8463
Publisher: Elsevier Ltd
Number of pages: 7
Grant note: Samsung Electronics Co., Ltd.
The corresponding author gratefully acknowledges the support of Samsung Electronics Co., Ltd. The authors also thank Mr. T. Bhattacharjee of the University of South Florida and Mr. Z. Shah of Purdue University for their insightful discussions on laser processing and appreciate the assistance of Mr. R. Mamman and Prof. C. Lamuta at the University of Iowa with surface profile measurements.
Language: English
Electronic publication date: 06/22/2026
Date published: 09/2026
Academic Unit: Mechanical Engineering
Record Identifier: 9985179239702771

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