Effect of electrical bias on spin transport across a magnetic domain wall

M Deutsch; G Vignale; M E Flatte

doi:10.1063/1.1815044

Back

Effect of electrical bias on spin transport across a magnetic domain wall

Journal article

Open access

Peer reviewed

Effect of electrical bias on spin transport across a magnetic domain wall

M Deutsch, G Vignale and M E Flatte

Journal of applied physics, Vol.96(12), pp.7424-7427

12/15/2004

DOI: 10.1063/1.1815044

Files and links (1)

url

https://arxiv.org/pdf/cond-mat/0406339View

Open Access

Abstract

We present a theory of the current-voltage characteristics of a magnetic domain wall between two highly spin-polarized materials, which takes into account the effect of the electrical bias on the spin-flip probability of an electron crossing the wall. We show that increasing the voltage reduces the spin-flip rate, and is therefore equivalent to reducing the width of the domain wall. As an application, we show that this effect widens the temperature window in which the operation of a unipolar spin diode is nearly ideal. (C) 2004 American Institute of Physics.

Physical Sciences

Physics

Physics, Applied

Science & Technology

Details

Title: Subtitle: Effect of electrical bias on spin transport across a magnetic domain wall
Creators: M Deutsch
G Vignale
M E Flatte
Resource Type: Journal article
Publication Details: Journal of applied physics, Vol.96(12), pp.7424-7427
DOI: 10.1063/1.1815044
ISSN: 0021-8979
eISSN: 1089-7550
Publisher: Amer Inst Physics
Number of pages: 4
Language: English
Date published: 12/15/2004
Academic Unit: Electrical and Computer Engineering; Physics and Astronomy
Record Identifier: 9984429029802771

Metrics

5 Record Views

6 Times Cited - Web of Science