Journal article
Effect of spin-orbit coupling on magnetoresistance in organic semiconductors
Physical review. B, Vol.75(3), 035202
01/01/2007
DOI: 10.1103/PhysRevB.75.035202
Abstract
We study the recently discovered organic magnetoresistance (OMAR) effect in a pair of materials that have similar chemical structures except that one contains a heavy atom to enhance spin-orbit coupling. We use photoluminescence spectroscopy to estimate the spin-orbit coupling strength. In the material with weak spin-orbit coupling the characteristic magnetic field scale is comparable to the hyperfine coupling strength. In the material with strong spin-orbit coupling we find that the OMAR is strongly reduced in size and the OMAR traces clearly exhibit a second, higher field scale which we identify with the spin-orbit coupling strength. We model our results using the standard spin-dynamics Hamiltonian.
Details
- Title: Subtitle
- Effect of spin-orbit coupling on magnetoresistance in organic semiconductors
- Creators
- Y. ShengT. D. Nguyen - University of IowaG. Veeraraghavan - University of IowaO. Mermer - University of IowaM. Wohlgenannt - University of Iowa
- Resource Type
- Journal article
- Publication Details
- Physical review. B, Vol.75(3), 035202
- Publisher
- Amer Physical Soc
- DOI
- 10.1103/PhysRevB.75.035202
- ISSN
- 2469-9950
- eISSN
- 2469-9969
- Number of pages
- 6
- Language
- English
- Date published
- 01/01/2007
- Academic Unit
- Physics and Astronomy
- Record Identifier
- 9984429028602771
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